2sa673, 2sa673a silicon pnp epitaxial ade-208-125 (z) 1st. edition mar. 2001 application low frequency amplifier complementary pair with 2sc1213 and 2sc1213a outline 1. emitter 2. collector 3. base to-92 (1) 3 2 1
2sa673, 2sa673a 2 absolute maximum ratings (ta = 25?) item symbol 2sa673 2sa673a unit collector to base voltage v cbo ?5 ?0 v collector to emitter voltage v ceo ?5 ?0 v emitter to base voltage v ebo ? ? v collector current i c ?00 ?00 ma collector power dissipation p c 400 400 mw junction temperature tj 150 150 c storage temperature tstg ?5 to +150 ?5 to +150 c electrical characteristics (ta = 25?) 2sa673 2sa673a item symbol min typ max min typ max unit test conditions collector to base breakdown voltage v (br)cbo ?5 ?0 v i c = ?0 m a, i e = 0 collector to emitter breakdown voltage v (br)ceo ?5 ?0 v i c = ? ma, r be = emitter to base breakdown voltage v (br)ebo ? ? v i e = ?0 m a, i c = 0 collector cutoff current i cbo ?.5 ?.5 m av cb = ?0 v, i e = 0 collector to emitter saturation voltage v ce(sat) ?.2 ?.6 ?.2 ?.6 v i c = ?50 ma, i b = ?5 ma* 2 dc current trnsfer ratio h fe * 1 60 320 60 320 v ce = ? v, i c = ?0 ma dc current trnsfer ratio h fe 10 10 v ce = ? v, i c = ?00 ma* 2 base to emitter voltage v be ?.64 ?.64 v v ce = ? v, i c =?0 ma notes: 1. the 2sa673 and 2sa673a are grouped by h fe as follows. 2. pulse test bcd 60 to 120 100 to 200 160 to 320
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